FUNDAMENTALS OF MODERN VLSI DEVICES YUAN TAUR PDF

Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.

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The book is logically organized. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom.

I am suprised to find this 2nd edition was re-printed in Want to Read Currently Reading Read. Modernn chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices. Ning Limited preview – Read more Read less. ComiXology Thousands of Digital Comics.

Learn the basic deviices and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description This book is not for one-time use. Want to Read saving…. I keep it fundamenttals my desk at all times. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices.

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Bipolar performance factors; Appendices. As a suggestion Dr. I have to mention that there are some bolded words in each chapter of the book. Joel rated it really liked it Dec 29, Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

So the total is 3 or 3. From the content and organization of this book I rate it 4. I always buy hardcover version book if I think the author is authoritive in the field and the fyndamentals and writing is yuqn good.

Fundamentals of Modern VLSI Devices

Why the seller did not state the bad quality of binding of fndamentals hardcover? See all 16 reviews. The second edition updates each chapter, adds new chapters on memory and SOI, doubles the number of appendices, and contains all new homework problems.

Customers who bought this item also bought. But what really disappoint me is that the binding quality of hardcover version is too bad.

Modern Semiconductor Devices for Integrated Circuits. Amazon Inspire Digital Educational Resources. Return to Book Page. The best book of its kind is now even better. We’re featuring millions of their reader ratings on our book pages to help you find your new favourite book.

Fundamentals of Modern VLSI Devices : Yuan Taur :

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The treatment of the subject matter is outstandingly thorough, covering the basic device physics and technology integration of bipolar and field-effect metal-oxide-semiconductor MOSFET and highlighting the subtle tradeoffs involved in modern transistor design and optimization.

Amazon Rapids Fun stories for kids on the go. CMOS performance factors; 6. I strongly recommend this book as a fundqmentals or a reference in semiconductor device courses.

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Fundamentals of Modern VLSI Devices by Yuan Taur

Omdern of 16 reviews. Diego Nahuel marked it as to-read Aug 11, Benjamin Gojman added it May 21, Mohamedmagdy marked it as to-read Apr 11, Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition.

Jayanti Paul marked it as to-read Dec 09, It will also be a valuable reference volume for practising engineers involved in research and development in the electronics industry.