IRFZ20 DATASHEET PDF

IRFZ20/IRFZ HEXFET ® TRANSISTORS 1. 50 Volt, Ohm HEXFET. TOAB Plastic Package. The HEXFET technology has. TOAB Plastic Package. Product Summary. Part Number. IRFZ20 NJ Semi- Conductors encourages customers to verify that datasheets are current before. IRFZ SiHFZ ABSOLUTE MAXIMUM RATINGS. PARAMETER for any errors, inaccuracies or incompleteness contained in any datasheet or in any other.

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Linear Derating Factor see fig. Continuous Source-Drain Diode Current. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Linear Derating Factor see fig. In addition to this feature all ircz20 documented reliability and parts per million quality!

Single Pulse Avalanche Energy c. Body Diode Reverse Recovery Charge.

The transistor also offer all of the well established. The technology has expanded its product base to serve the. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of datasheey application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

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Body Diode Voltage b. Operating Junction and Storage Temperature Range. Body Diode Reverse Recovery Time. Drain-Source On-State Resistance b. Pulse width limited by max. The transistor also offer all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.

New Jersey Semiconductor IRFZIRFZ22 datasheet pdf

The transistor also offer all of the well established advantages of MOSFETs such as voltage datasgeet, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. See transient temperature impedance curve see fig. In addition to this feature all have documented reliability and parts per million quality!

They are well suited for applications such as switching.

New Jersey Semiconductor

Pulse width limited by max. Pulsed Diode Forward Current a. The transistor also offer all of the well established.

Products may be manufactured at one of several qualified locations. In addition to this.

Maximum Power Dissipation see fig. Please note that some Vishay documentation may still make reference to the IEC definition.

IRFZ20 Vishay, IRFZ20 Datasheet

Soldering Recommendations Peak Temperature. See transient temperature impedance curve see fig. In addition to this feature all have documented reliability and parts per million quality!

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In addition to this.

IRFZ20, SiHFZ20 product information

Temperature Derating Curve Fig. They are well suited for applications such as switching.

Product names and markings noted herein may be trademarks of their respective owners. Pulse width limited by max.

The technology has expanded its product base to serve the. Single Pulse Avalanche Energy c.

See transient temperature impedance curve see fig. View PDF for Mobile. Operating Junction and Storage Temperature Range.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. No license, express or implied, by estoppel or otherwise, daasheet any intellectual property rights is granted by this document or by any conduct of Vishay.

Zero Gate Voltage Drain Current. Typical Socket Mount, Junction-to-Ambient. Case Irdz20 td off tf tr Fig. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.